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MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75E2Y/E3Y-2H
* * * * *
IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 12 93 46.5
10.5
(E2Y) E1 (7.5) D2
A1 D1
C1
6.5
23
23
5 B1 E1
8
15
8 M5
Tab#110, t=0.5
6.5
10.5
E1 B1
13
34
(E3Y)
D2 D1
37
30
23
LABEL
C1
E1
K1
E1
B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Transistor part including D1, Tj=25C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 75 75 500 4 750 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing
(Diode part (D2), Tj=25C)
Conditions Ratings 1000 1100 800 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current 75 1500 9.45 x 103 Unit V V V A A A2s
ABSOLUTE MAXIMUM RATINGS
Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage
(Common)
Conditions Ratings -40~150 -40~125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Transistor part including D1, Tj=25C)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=75A, IB=1.5A -IC=75A (diode forward voltage) IC=75A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 100 2.5 3.5 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
(Diode part (D2), Tj=25C)
Test conditions VR=VRRM, Tj=150C IF=75A IF=75A, di/dt=-150A/s, VR=600V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 15 1.5 1.0 40 0.6 0.13 Unit mA V s C C/ W C/ W
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C COLLECTOR CURRENT IC (A) 80 IB=1.5A DC CURRENT GAIN hFE IB=1.0A IB=0.5A 60 IB=0.2A 40 IB=0.1A 10 4 7 5 3 2 10 3 7 5 3 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C
VCE=5.0V VCE=2.8V
20
0
0
1
2
3
4
5 VCE (V)
10 2 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE=2.8V Tj=25C
VCE(sat)
IB=1.5A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
3.4 VBE (V)
3.8
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
5
ton, ts, tf (s)
4
IC=100A
10 2 7 5 3 2 10 1 7 5 3 2
ts
VCC=600V IB1=-IB2=1.5A Tj=25C Tj=125C
3 IC=75A IC=50A 1 IC=30A Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
BASE CURRENT IB (A)
SWITCHING TIME
tf
2
ton 10 0 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR CURRENT IC (A)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1
160 VCC=600V IC=75A IB1=1.5A Tj=25C Tj=125C 140 120 100 Tj=125C 80 60 40 20 0 0 200 400 600 800 1000
VCE (V)
ts, tf (s)
IB2=-2A IB2=-4A
ts
SWITCHING TIME
tf
2 3 4 5 7 10 0
2 3 4 5 7 10 1
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
10 3 7 5 3 2 10 2 7 5 3 2
100 tw=50s 100s 200s DC 1ms 90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 1 7 5 3 2 TC=25C 10 0 NON-REPETITIVE 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
80 100 120 140 160
TC (C)
CASE TEMPERATURE
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.32
0.28 0.24
Zth (j-c) (C/W)
0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
TIME (s)
PERFORMANCE CURVES (Diode part (D1))
FORWARD CHARACTERISTICS (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2
MAXIMUM SURGE CURRENT IFSM (A) SURGE FORWARD CURRENT
800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
FORWARD CURRENT IF (A)
Tj=25C Tj=125C 1.6 2.0
FORWARD VOLTAGE
VF (A)
CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
10 2 7 VCC=600V 5 IB1=-IB2=1.5A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 Qrr 10 1
1.6
Irr (A), Qrr (c)
Zth (j-c) (C/W)
Irr 10 0
trr (s)
1.2
0.8
trr 0.4 10 -1 2 3 4 5 7 10 2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
2 3 4 5 7 10 1
FORWARD CURRENT
IF (A)
TIME (s)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES (Diode part (D2))
MAXIMUM FORWARD CHARACTERISTIC TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 1.0
FORWARD CURRENT IF (A)
10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0
Tj=25C
Zth (j-c) (C/W)
0.8
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
TIME (s)
0.6
1.0
1.4
1.8
2.2
VF (V)
FORWARD VOLTAGE
MAXIMUM SURGE CURRENT IFSM (A)
REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL)
2000 1800 1600 1400 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
Irr (A), Qrr (C)
SURGE FORWARD CURRENT
10 2 7 VR=600V 5 di/dt=-150A/s 3 2 10 1 7 5 3 2
10 2 Irr Qrr 10 1
trr (s)
Tj=25C 10 0 10 0 trr Tj=150C 7 5 3 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL)
Irr (A), Qrr (C)
10 2 7 VR=300V 5 IF=75A 3 Tj=25C 2 Tj=150C 10 1 7 5 3 2 10 0 7 5 3 2
Irr Qrr
10 2
10 1
trr (s)
10 0 trr
10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
di/dt (A/s)
Feb.1999

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